Thin CuInS2 films by three-source molecular beam deposition

被引：51

作者：

Gossla, M ^{[1
]}

Hahn, T ^{[1
]}

Metzner, H ^{[1
]}

Conrad, J ^{[1
]}

Geyer, U ^{[1
]}

机构：

[1] UNIV GOTTINGEN,INST PHYS 1,D-37073 GOTTINGEN,GERMANY

来源：

THIN SOLID FILMS | 1995年 / 268卷 / 1-2期

关键词：

molecular beam epitaxy; sulphur; rutherford backscattering spectroscopy; scanning tunnelling microscopy;

D O I：

10.1016/0040-6090(95)06870-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the growth of thin CuInS2 films by the evaporation of the elements on (100)Si and glass substrates. For the metals commercially available Knudsen effusion cells were used, while for the sulphur a new three-stage cracker cell has been developed. The polycrystalline films are characterized by Rutherford backscattering spectroscopy, X-ray diffraction, and scanning tunnelling microscopy. The effects of substrate and annealing temperatures and deposition rates on composition, crystalline order, grain size and surface morphology are investigated. The conditions for the growth of stoichiometric and planar CuInS, thin films of good crystal quality are determined.

引用

页码：39 / 44

页数：6

共 21 条

[1]

BENTE K, 1991, CHEM ERDE, V0051

[2] PREPARATION OF THIN CUINS2 FILMS VIA A 2-STAGE PROCESS [J].