SHALLOW DONOR ASSOCIATED WITH THE MAIN ELECTRON TRAP (EL2) IN MELT-GROWN GAAS

被引：41

作者：

WALUKIEWICZ, W

LAGOWSKI, J

GATOS, HC

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 01期

关键词：

D O I：

10.1063/1.94147

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：112 / 114

页数：3

共 13 条

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SCHLUTER, M ;

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[2]

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[3]

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[4]

Holmes D. E., 1982, IEEE T ELECTRON DEV, V29, P1045

[5] CURRENT OSCILLATIONS IN SEMI-INSULATING GAAS ASSOCIATED WITH FIELD-ENHANCED CAPTURE OF ELECTRONS BY THE MAJOR DEEP DONOR EL2 [J].

KAMINSKA, M ;

PARSEY, JM ;

LAGOWSKI, J ;

GATOS, HC .

APPLIED PHYSICS LETTERS, 1982, 41 (10) :989-991

[6] PASSIVATION OF THE DOMINANT DEEP LEVEL (EL2) IN GAAS BY HYDROGEN [J].

LAGOWSKI, J ;

KAMINSKA, M ;

PARSEY, JM ;

GATOS, HC ;

LICHTENSTEIGER, M .

APPLIED PHYSICS LETTERS, 1982, 41 (11) :1078-1080

[7] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J].

LAGOWSKI, J ;

GATOS, HC ;

PARSEY, JM ;

WADA, K ;

KAMINSKA, M ;

WALUKIEWICZ, W .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :342-344

[8]

LAGOWSKI J, 1982, 10TH C GAAS REL COMP

[9] COMPENSATION MECHANISMS IN GAAS [J].

MARTIN, GM ;

FARGES, JP ;

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HALLAIS, JP ;

POIBLAUD, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2840-2852

[10]

MARTIN GM, 1980, 1ST P INT C SEM 3 5, P13

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