HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATION OF INTERFACES IN METAL-SILICON SYSTEMS

被引：10

作者：

CHEN, LJ

LIANG, JM

LIU, CS

HSIEH, WY

LIN, JH

LEE, TL

WANG, MH

CHEN, WJ

机构：

[1] Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu

来源：

ULTRAMICROSCOPY | 1994年 / 54卷 / 2-4期

关键词：

D O I：

10.1016/0304-3991(94)90114-7

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

High-resolution transmission electron microscopy (HRTEM) has been fruitfully applied to study metal/Si interfaces, formation and growth of amorphous interlayers, first nucleated phases, simultaneous occurrence of multiphases, epitaxial silicide-Si interfaces, single-crystal silicide-silicon interfaces, twin boundaries and other defects in metal/Si systems. In this paper, examples are presented to highlight the contributions of HRTEM to the understanding of interfaces in metal/Si systems.

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页码：156 / 165

页数：10

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