MUON CHANNELING IN SEMICONDUCTORS - EVIDENCE FOR PIONIUM FORMATION

被引：19

作者：

FLIK, G

BRADBURY, JN

COOKE, DW

HEFFNER, RH

LEON, M

PACIOTTI, MA

SCHILLACI, ME

MAIER, K

REMPP, H

REIDY, JJ

BOEKEMA, C

DANIEL, H

机构：

[1] MAX PLANCK INST MET RES,INST PHYS,D-7000 STUTTGART 80,FED REP GER

[2] UNIV STUTTGART,INST THEORET & ANGEW,D-7000 STUTTGART 80,FED REP GER

[3] UNIV MISSISSIPPI,UNIVERSITY,MS 38677

[4] SAN JOSE STATE UNIV,SAN JOSE,CA 95192

[5] TECH UNIV MUNICH,DEPT PHYS,D-8046 GARCHING,FED REP GER

来源：

PHYSICAL REVIEW LETTERS | 1986年 / 57卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.57.563

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：563 / 566

页数：4

共 10 条

[1]

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[3]

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PHYSICS LETTERS A, 1982, 87 (07) :376-380

[6]

Patterson B.D, 1984, MUONS PIONS MATERIAL

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[8] SELF-CONSISTENT-FIELD INVESTIGATION OF LOCATION AND HYPERFINE INTERACTION OF MUONIUM IN DIAMOND [J].

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[9] VIBRATIONAL AND ELECTRONIC-STRUCTURE OF HYDROGEN-RELATED DEFECTS IN SILICON CALCULATED BY EXTENDED HUCKEL THEORY [J].

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[10] DEPOLARIZATION MECHANISMS FOR MUONIUM IN GERMANIUM [J].

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PHYSICAL REVIEW B, 1981, 24 (10) :6185-6188

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