ON THE IDENTIFICATION OF THE VIBRATIONAL-SPECTRA IN HYDROGEN IMPLANTED CRYSTALLINE SILICON

被引：30

作者：

MUKASHEV, BN

NUSSUPOV, KH

TAMENDAROV, MF

FROLOV, VV

机构：

来源：

关键词：

D O I：

10.1016/0375-9601(82)90849-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：376 / 380

页数：5

共 13 条

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CORELLI, JC
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 90 (02): : 689 - 695
[3] KLEINHENZ RL, 1979, C SER I PHYS LONDON, V46, P200
[4] EPR EVIDENCE OF SELF-INTERSTITIALS IN NEUTRON-IRRADIATED SILICON
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[J]. SOLID STATE COMMUNICATIONS, 1974, 15 (11-1) : 1781 - 1784
[5] NEW INFRARED-ABSORPTION BANDS IN HYDROGEN-IMPLANTED SILICON
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NUSSUPOV, KH
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[J]. PHYSICS LETTERS A, 1979, 72 (4-5) : 381 - 383
[6] DIVACANCY IN SILICON IRRADIATED BY PROTONS
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 96 (01): : K17 - K19
[7] STRUCTURE OF HYDROGEN CENTER IN D-IMPLANTED SI
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VOOK, FL
[J]. PHYSICAL REVIEW B, 1978, 18 (05): : 2066 - 2077
[8] PICRAUX ST, 1979, C SER, V46, P31
[9] SEMIEMPIRICAL CALCULATIONS OF HYDROGEN DEFECTS IN SILICON
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WEIGEL, C
ROTH, LM
[J]. PHYSICS LETTERS A, 1978, 65 (03) : 261 - 263
[10] VIBRATIONAL AND ELECTRONIC-STRUCTURE OF HYDROGEN-RELATED DEFECTS IN SILICON CALCULATED BY EXTENDED HUCKEL THEORY
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 81 (02): : 637 - 646