NEW INFRARED-ABSORPTION BANDS IN HYDROGEN-IMPLANTED SILICON

被引：31

作者：

MUKASHEV, BN

NUSSUPOV, KH

TAMENDAROV, MF

机构：

[1] Institute of High Energy Physics, the Academy of Sciences of the Kazakh SSR, Alma-Ata

来源：

PHYSICS LETTERS A | 1979年 / 72卷 / 4-5期

关键词：

D O I：

10.1016/0375-9601(79)90503-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

New vibrational modes of silicon-hydrogen complexes in the stretching (∼2000 cm-1), bending (∼900 cm-1 and wagging (∼600 cm-1 regions are resolved in hydrogen-implanted silicon. Further detailed studies are required to indentity hydrogen-associated bands corresponding to SiH or SiHn groupings. © 1979.

引用

页码：381 / 383

页数：3

共 12 条

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YOUNG, RC
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[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) : 128 - &
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[4] INFRARED-ABSORPTION OF SILICON IRRADIATED BY PROTONS
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 90 (02): : 689 - 695
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[6] KIMERLING LC, 1975, I PHYS C SER, V23, P126
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[8] SHALLOW DONOR FORMATION IN SI PRODUCED BY PROTON BOMBARDMENT
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (01): : 93 - 98
[9] ELECTRICAL PROPERTIES OF N-TYPE SI LAYERS DOPED WITH PROTON BOMBARDMENT INDUCED SHALLOW DONORS
OHMURA, Y
ZOHTA, Y
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[J]. SOLID STATE COMMUNICATIONS, 1972, 11 (01) : 263 - &
[10] PICRAUX ST, 1978, C DEFECTS RAD EFFECT

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