INFRARED-ABSORPTION OF SILICON IRRADIATED BY PROTONS

[1] BALKANSKI M, 1963, J PHYS SOC JAPAN S2, V18, P37

[2] ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1528) : 133 - +

[3] BRODSKY MH, 1977, APPL PHYS LETT, V30, P581

[4] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +

[5] AMORPHOUS SILICON SOLAR-CELL [J]. APPLIED PHYSICS LETTERS, 1976, 28 (11) : 671 - 673

[6] CHEN CS, 1973, RAD DAMAGE DEFECTS S, P210

[7] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +

[8] NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1964, 135 (5A): : 1381 - +

[9] CONFIGURATION + DIFFUSION OF ISOLATED OXYGEN IN SILICON + GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (08) : 873 - &

[10] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &

[1] BALKANSKI M, 1963, J PHYS SOC JAPAN S2, V18, P37

[2] ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1528) : 133 - +

[3] BRODSKY MH, 1977, APPL PHYS LETT, V30, P581

[4] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +

[5] AMORPHOUS SILICON SOLAR-CELL [J]. APPLIED PHYSICS LETTERS, 1976, 28 (11) : 671 - 673

[6] CHEN CS, 1973, RAD DAMAGE DEFECTS S, P210

[7] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +

[8] NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1964, 135 (5A): : 1381 - +

[9] CONFIGURATION + DIFFUSION OF ISOLATED OXYGEN IN SILICON + GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (08) : 873 - &

[10] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &