INFRARED-ABSORPTION OF SILICON IRRADIATED BY PROTONS

[11] CORBETT JW, 1977, RAD EFFECTS SEMICOND, P1

[12] CORBIN A, 1975, ENDOCR RES COMMUN, V2, P1

[13] ANNEALING OF INFRARED DEFECT ABSORPTION BANDS IN 40-MEV ELECTRON-IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1787 - &

[14] CORELLI JC, 1977, RAD EFFECTS SEMICOND, P251

[15] CORELLI JC, 1970, IEEE T NUCL SCI, V17, P126

[16] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1127 - 1134

[17] GERASIME.NN, 1974, SOV PHYS SEMICOND+, V7, P960

[18] Harrick N.J., 1967, INTERNAL REFLECTION

[19] JANZ GJ, 1961, B CHEM SOC JAPAN, V34, P1405

[20] INFRARED ABSORPTION AND OXYGEN CONTENT IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1956, 101 (04): : 1264 - 1268

[11] CORBETT JW, 1977, RAD EFFECTS SEMICOND, P1

[12] CORBIN A, 1975, ENDOCR RES COMMUN, V2, P1

[13] ANNEALING OF INFRARED DEFECT ABSORPTION BANDS IN 40-MEV ELECTRON-IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1787 - &

[14] CORELLI JC, 1977, RAD EFFECTS SEMICOND, P251

[15] CORELLI JC, 1970, IEEE T NUCL SCI, V17, P126

[16] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1127 - 1134

[17] GERASIME.NN, 1974, SOV PHYS SEMICOND+, V7, P960

[18] Harrick N.J., 1967, INTERNAL REFLECTION

[19] JANZ GJ, 1961, B CHEM SOC JAPAN, V34, P1405

[20] INFRARED ABSORPTION AND OXYGEN CONTENT IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1956, 101 (04): : 1264 - 1268