STUDY OF ETA-INXGA1-XAS/ETA-GAAS HETEROJUNCTION EPILAYERS

被引：13

作者：

JEONG, J

LEE, JC

SCHLESINGER, TE

MILNES, AG

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1116/1.583752

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：792 / 795

页数：4

共 11 条

[1]

ANDRE JP, 1986, INT S GAAS RELATED C

[2] DEEP LEVELS IN IN0.53GA0.47AS/INP HETEROSTRUCTURES [J].

FORREST, SR ;

KIM, OK .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5738-5745

[3]

KAVANAGH KL, 1986 EL MAT C AMH

[4] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING [J].

KROEMER, H ;

CHIEN, WY ;

HARRIS, JS ;

EDWALL, DD .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :295-297

[5]

MILNES AG, 1972, HETEROJUNCTIONS META, pCH4

[6] STRUCTURE OF VAPOR-DEPOSITED GAXIN1-XAS CRYSTALS [J].

NAGAI, H .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3789-3794

[7] GROWTH AND CHARACTERIZATION OF LIQUID-PHASE EPITAXIAL INXGA1-XAS [J].

NAHORY, RE ;

POLLACK, MA ;

DEWINTER, JC .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :775-782

[8] A CAPACITANCE INVESTIGATION OF INGAAS/INP ISOTYPE HETEROJUNCTION [J].

OGURA, M ;

MIZUTA, M ;

ONAKA, K ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10) :1502-1509

[9] AN IN0.15GA0.85 AS/GAAS PSEUDOMORPHIC SINGLE QUANTUM WELL HEMT [J].

ROSENBERG, JJ ;

BENLAMRI, M ;

KIRCHNER, PD ;

WOODALL, JM ;

PETTIT, GD .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) :491-493

[10]

SCHAFF WJ, 1986 EL MAT C AMH

← 1 2 →