PB1-XSNXTE EPITAXIAL LAYERS PREPARED BY HOT-WALL TECHNIQUE

被引：34

作者：

KASAI, I ^{[1
]}

HORNUNG, J ^{[1
]}

BAARS, J ^{[1
]}

机构：

[1] FRAUNHOFER GESELL,INST ANGEW FESTKORPER PHYS,ECKER STR 4,7800 FREIBURG,FED REP GER

来源：

关键词：

D O I：

10.1007/BF02655407

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：299 / 311

页数：13

共 10 条

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[2] THICK EPITAXIAL FILMS OF PB1-XSNXTE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (01): : 226 - &
[3] HUDOCK P, 1967, T METALL SOC AIME, V239, P338
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[6] VAPORIZATION IN PBTE-SNTE SYSTEM
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[7] QUASI-STATIC GROWTH OF PBS EPITAXIC FILMS
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[J]. THIN SOLID FILMS, 1972, 12 (02) : 419 - &
[8] DEVICE APPLICATION OF IV-VI COMPOUND SEMICONDUCTOR FILMS
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[9] SOKOLOV VV, 1966, RUSS J PHYS CHEM, V46, P885
[10] Zemel J. N., 1973, Journal of Luminescence, V7, P524, DOI 10.1016/0022-2313(73)90082-3