THICK EPITAXIAL FILMS OF PB1-XSNXTE

被引：32

作者：

BIS, RF

DIXON, JR

LOWNEY, JR

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1972年 / 9卷 / 01期

关键词：

D O I：

10.1116/1.1316562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：226 / &

共 17 条

[1] THICK EPITAXIAL FILMS OF CUBIC ZINC SULFIDE DEPOSITED BY A HOT WALL TECHNIQUE
BEHRNDT, ME
MORENO, SC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (03): : 494 - +
[2] APPLICABILITY OF VEGARDS LAW TO PBXSN1-XTE ALLOY SYSTEM
BIS, RF
DIXON, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1918 - &
[3] ALLOY FILMS OF PBTEXSE1-X
BIS, RF
ZEMEL, JN
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 228 - &
[4] Bylander E. G., 1966, MATER SCI ENG, V1, P190
[5] BAND STRUCTURE AND LASER ACTION IN PBXSN1-XTE
DIMMOCK, JO
MELNGAIL.I
STRAUSS, AJ
[J]. PHYSICAL REVIEW LETTERS, 1966, 16 (26) : 1193 - &
[6] DIMMOCK JO, TO BE PUBLISHED
[7] BAND INVERSION AND ELECTRICAL PROPERTIES OF PBXSN1-XTE
DIXON, JR
BIS, RF
[J]. PHYSICAL REVIEW, 1968, 176 (03): : 942 - +
[8] INFLUENCE OF BAND INVERSION UPON ELECTRICAL PROPERTIES OF PBO.77SNO.23SE
DIXON, JR
HOFF, GF
[J]. PHYSICAL REVIEW B, 1971, 3 (12): : 4299 - &
[9] EPITAXIAL GROWTH OF LEAD TIN TELLURIDE
HOLLOWAY, H
LOGOTHETIS, EM
WILKES, E
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) : 3543 - +
[10] EPITAXIAL GROWTH OF SMALL BANDGAP SEMICONDUCTORS
HOLLOWAY, H
HOHNKE, DK
LOGOTHETIS, EM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01): : 146 - +