DETECTION AND MEASUREMENT OF LOCAL DISTORTIONS IN A SEMICONDUCTOR LAYERED STRUCTURE BY CONVERGENT-BEAM ELECTRON-DIFFRACTION

被引：31

作者：

MAHER, DM

FRASER, HL

HUMPHREYS, CJ

KNOELL, RV

BEAN, JC

机构：

[1] UNIV ILLINOIS,URBANA,IL 61801

[2] UNIV LIVERPOOL,LIVERPOOL L69 3BX,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 10期

关键词：

D O I：

10.1063/1.98139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：574 / 576

页数：3

共 12 条

[1] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

SHENG, TT ;

FELDMAN, LC ;

FIORY, AT ;

LYNCH, RT .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :102-104

[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

FELDMAN, LC ;

FIORY, AT ;

NAKAHARA, S ;

ROBINSON, IK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440

[3] RAMAN-SCATTERING FROM GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES [J].

CERDEIRA, F ;

PINCZUK, A ;

BEAN, JC ;

BATLOGG, B ;

WILSON, BA .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1138-1140

[4] MICRODIFFRACTION AND STEM OF INTERFACES [J].

COWLEY, JM .

ULTRAMICROSCOPY, 1984, 14 (1-2) :27-36

[5] LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS [J].

DISMUKES, JP ;

PAFF, RJ ;

EKSTROM, L .

JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (10) :3021-&

[6] COMMENSURATE AND INCOMMENSURATE STRUCTURES IN MOLECULAR-BEAM EPITAXIALLY GROWN GEXSI1-X FILMS ON SI(100) [J].

FIORY, AT ;

BEAN, JC ;

FELDMAN, LC ;

ROBINSON, IK .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :1227-1229

[7]

FRASER HL, 1985, I PHYS C SER, V76, P307

[8] ELASTIC RELAXATION IN TRANSMISSION ELECTRON-MICROSCOPY OF STRAINED-LAYER SUPERLATTICES [J].

GIBSON, JM ;

HULL, R ;

BEAN, JC ;

TREACY, MMJ .

APPLIED PHYSICS LETTERS, 1985, 46 (07) :649-651

[9]

HULL R, 1984, APPL PHYS LETT, V56, P1227

[10]

SIMMONS G, 1971, SINGLE CRYSTAL ELAST, P188

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