DONORLIKE EXCITED-STATES OF THE THERMALLY INDUCED 0.767-EV (P LINE) DEFECT IN OXYGEN-RICH SILICON

被引：30

作者：

WAGNER, J ^{[1
]}

DORNEN, A ^{[1
]}

SAUER, R ^{[1
]}

机构：

[1] UNIV STUTTGART,INST PHYS,TEIL 4,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.31.5561

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5561 / 5564

页数：4

共 19 条

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