A SOURCE-SIDE INJECTION ERASABLE PROGRAMMABLE READ-ONLY-MEMORY (SI-EPROM) DEVICE

被引:8
作者
WU, AT [1 ]
CHAN, TY [1 ]
KO, PK [1 ]
HU, CM [1 ]
机构
[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
关键词
D O I
10.1109/EDL.1986.26465
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:540 / 542
页数:3
相关论文
共 5 条
[1]   ASYMMETRICAL CHARACTERISTICS IN LDD AND MINIMUM-OVERLAP MOSFETS [J].
CHAN, TY ;
WU, AT ;
KO, PK ;
HU, CM ;
RAZOUK, RR .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) :16-19
[2]  
KOMORI K, 1985 IEDM, P627
[3]  
PINTO MR, 1984, THESIS STANFORD U ST
[4]  
TAM S, 1984, IEEE T ELECTRON DEV, V31, P1116
[5]   ONE-DIMENSIONAL WRITING MODEL OF N-CHANNEL FLOATING GATE IONIZATION-INJECTION MOS (FIMOS) [J].
TANAKA, S ;
ISHIKAWA, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) :1190-1197