ASYMMETRICAL CHARACTERISTICS IN LDD AND MINIMUM-OVERLAP MOSFETS

被引：43

作者：

CHAN, TY ^{[1
]}

WU, AT ^{[1
]}

KO, PK ^{[1
]}

HU, CM ^{[1
]}

RAZOUK, RR ^{[1
]}

机构：

[1] FAIRCHILD RES CTR,PALO ALTO,CA 94304

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 01期

关键词：

D O I：

10.1109/EDL.1986.26277

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：16 / 19

页数：4

相关论文

共 6 条

[1] STRUCTURE-ENHANCED MOSFET DEGRADATION DUE TO HOT-ELECTRON INJECTION
HSU, FC
GRINOLDS, HR
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) : 71 - 74
[2] A NEW SUBSTRATE AND GATE CURRENT PHENOMENON IN SHORT-CHANNEL LDD AND MINIMUM OVERLAP DEVICES
HUI, J
HSU, FC
MOLL, J
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) : 135 - 138
[3] KATTO H, 1984 IEDM, P774
[4] KO PK, 1984 IEDM, P88
[5] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR
OGURA, S
TSANG, PJ
WALKER, WW
CRITCHLOW, DL
SHEPARD, JF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1359 - 1367
[6] CORRELATION BETWEEN SUBSTRATE AND GATE CURRENTS IN MOSFETS
TAM, S
KO, PK
HU, CM
MULLER, RS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) : 1740 - 1744