OBSERVATIONS ON QUICK FLUCTUATION OF ATOM IMAGES OF SI CRYSTAL-LATTICE UNDER 800-KV ELECTRON-IRRADIATION

被引:6
作者
HASHIMOTO, H
MAKITA, Y
YOKOTA, Y
IKUTA, T
HASHIMOTO, M
HETHERINGTON, CJD
机构
[1] OSAKA ELECTROCOMMUN UNIV,NEYAGAWA,OSAKA 572,JAPAN
[2] SETSUNAN UNIV,NEYAGAWA,OSAKA 572,JAPAN
[3] UNIV CALIF BERKELEY,NATL CTR ELECTRON MICROSCOPY,BERKELEY,CA 94720
关键词
D O I
10.1016/0304-3991(91)90195-C
中图分类号
TH742 [显微镜];
学科分类号
摘要
The movement of atom images of a Si crystal lattice under 800 kV electron beam irradiation has been recorded with the 1 MeV atomic resolution electron microscope at U.C. Berkeley equipped with a TV image viewing and video recording system. The small, rapid movements and contrast changes during 1/30 s have been revealed by taking the difference between two successive images which are recorded in each frame of the TV tape and processed. The difference between successive images has been displayed in real and prolonged time.
引用
收藏
页码:171 / 179
页数:9
相关论文
共 12 条
[1]   ELECTRON-MICROSCOPE OBSERVATION OF THE STRUCTURE AND BEHAVIOR OF STACKING-FAULT TETRAHEDRA AND SINGLE VACANCIES IN GOLD CRYSTALS IRRADIATED BY 2 MEV ELECTRONS [J].
AJIKA, N ;
HASHIMOTO, H ;
TAKAI, Y .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 87 (01) :235-252
[2]  
COLE MD, 1976, 6TH P EUR C EL MICR, V2, P543
[3]   DETECTION OF SMALL DISPLACEMENT OF ATOMS IN CRYSTALS BY ATOM RESOLUTION ELECTRON-MICROSCOPY [J].
HASHIMOTO, H ;
KUWABARA, M ;
TAKAI, Y ;
TSUBOKAWA, S ;
YOKOTA, Y .
JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1989, 12 (03) :180-200
[4]  
HASHIMOTO H, 1988, I PHYS C SER, V93, P175
[5]  
HASHIMOTO H, 1978, ELECTRON MICROS, V1, P284
[6]  
HASHIMOTO H, 1978, CHEM SCRIPTA, V14, P125
[7]   DYNAMIC STUDIES OF DEFECT MOBILITY USING HIGH-VOLTAGE ELECTRON-MICROSCOPY [J].
KIRITANI, M ;
TAKATA, H .
JOURNAL OF NUCLEAR MATERIALS, 1978, 69-7 (1-2) :277-309
[8]   HISTORY, PRESENT STATUS AND FUTURE OF THE CONTRIBUTION OF HIGH-VOLTAGE ELECTRON-MICROSCOPY TO THE STUDY OF RADIATION-DAMAGE AND DEFECTS IN SOLIDS [J].
KIRITANI, M .
ULTRAMICROSCOPY, 1991, 39 (1-4) :135-159
[9]  
KUWABARA M, 1985, P S IN SITU EXP, P18
[10]  
TANJI T, 1982, J ELECTRON MICROSC, V31, P1