PLASMA-DAMAGED OXIDE RELIABILITY STUDY CORRELATING BOTH HOT-CARRIER INJECTION AND TIME-DEPENDENT DIELECTRIC-BREAKDOWN

被引：19

作者：

LI, XY ^{[1
]}

HSU, JT ^{[1
]}

AUM, P ^{[1
]}

CHAN, D ^{[1
]}

REMBETSKI, J ^{[1
]}

VISWANATHAN, CR ^{[1
]}

机构：

[1] SEMATECH,AUSTIN,TX 78741

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 02期

关键词：

D O I：

10.1109/55.215118

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The oxide damage resulting from exposure to a plasma environment in four different dry-etch tools was investigated using both hot-carrier injection (HCI) and time-dependent dielectric breakdown (TDDB). A strong correlation was observed between hot-carrier injection results and time-dependent dielectric breakdown results. It was found that a damaged oxide has both a lower critical energy for HCI to create an interface trap, and a lower activation energy for Fowler-Nordheim injection to create a hole in the oxide. These results also suggest that in dry etching, possibly more damage occurs in the metal etch step than in the contact etch step.

引用

页码：91 / 93

页数：3

共 7 条

[1] ACCELERATED TESTING OF TIME-DEPENDENT BREAKDOWN OF SIO2 [J].