OXIDE BREAKDOWN DUE TO CHARGE ACCUMULATION DURING PLASMA-ETCHING

被引：24

作者：

RYDEN, KH ^{[1
]}

NORSTROM, H ^{[1
]}

NENDER, C ^{[1
]}

BERG, S ^{[1
]}

机构：

[1] UNIV UPPSALA,INST TECHNOL,S-75121 UPPSALA,SWEDEN

来源：

关键词：

D O I：

10.1149/1.2100351

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：3113 / 3118

页数：6

共 9 条

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