MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING WITH NF3

被引：77

作者：

ASHOK, S ^{[1
]}

CHOW, TP ^{[1
]}

BALIGA, BJ ^{[1
]}

机构：

[1] GE, CORP RES & DEV, SCHENECTADY, NY 12345 USA

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 08期

关键词：

D O I：

10.1063/1.94073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：687 / 689

页数：3

相关论文

共 17 条

[1] ON RESOLVING THE ANOMALY OF INDIUM-TIN OXIDE SILICON JUNCTIONS
ASHOK, S
FONASH, SJ
SINGH, R
WILEY, P
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (07): : 184 - 186
[2] SUBSTRATE SURFACE DAMAGES BY RF-SPUTTERING
BERG, S
ANDERSSON, LP
NORSTROM, H
GRUSELL, E
[J]. VACUUM, 1977, 27 (03) : 189 - 191
[3] PLANAR PLASMA-ETCHING OF POLYSILICON USING CCL4 AND NF3
BOWER, DH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) : 795 - 799
[4] CHOW T, UNPUB
[5] Chow T. P., 1980, International Electron Devices Meeting. Technical Digest, P149
[6] PLASMA-ETCHING OF SPUTTERED MO AND MOSI2 THIN-FILMS IN NF3 GAS-MIXTURES
CHOW, TP
STECKL, AJ
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5531 - 5540
[7] INVESTIGATIONS ON DAMAGE CAUSED BY ION ETCHING OF SIO2 LAYERS AT LOW-ENERGY AND HIGH DOSE
DEPPE, HR
HASLER, B
HOPFNER, J
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (01) : 51 - 55
[8] EFFECT OF ION-BEAM SPUTTER DAMAGE ON SCHOTTKY-BARRIER FORMATION IN SILICON
FONASH, SJ
ASHOK, S
SINGH, R
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 423 - 425
[9] RECENT TRENDS IN DRY ETCHING
KUROGI, Y
[J]. THIN SOLID FILMS, 1982, 92 (1-2) : 33 - 40
[10] EFFECTS OF SPUTTERING DAMAGE ON CHARACTERISTICS OF MOLYBDENUM-SILICON SCHOTTKY-BARRIER DIODES
MULLINS, FH
BRUNNSCHWEILER, A
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (01) : 47 - 50