MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING WITH NF3

被引：77

作者：

ASHOK, S ^{[1
]}

CHOW, TP ^{[1
]}

BALIGA, BJ ^{[1
]}

机构：

[1] GE, CORP RES & DEV, SCHENECTADY, NY 12345 USA

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 08期

关键词：

D O I：

10.1063/1.94073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：687 / 689

页数：3

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