ELECTRICAL DAMAGE IN MOS DEVICES BY RF DIODE SPUTTERED ALUMINUM METALLIZATION

被引：4

作者：

SERIKAWA, T

YACHI, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 07期

关键词：

D O I：

10.1109/T-ED.1981.20448

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：882 / 885

页数：4

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