RADIATION-DAMAGE OF THERMALLY OXIDIZED MOS CAPACITORS

被引：6

作者：

KAMPF, U ^{[1
]}

WAGEMANN, HG ^{[1
]}

机构：

[1] HAHN MEITNER INST,ELECTR DIV,POSTFACH 390128,1 BERLIN,FED REP GER

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 01期

关键词：

D O I：

10.1109/T-ED.1976.18338

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：5 / 10

页数：6

共 23 条

[1] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR
AUBUCHON, KG
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 117 - +
[2] EXPERIMENTS AND MODEL OF NONEQUILIBRIUM BEHAVIOR OF MIS VARACTORS USING LINEAR RAMP TECHNIQUE
BRAUNIG, D
WAGEMANN, HG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (04) : 241 - 247
[3] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS
BROWN, DM
GRAY, PV
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +
[4] 4 PARAMETERS MODEL THAT FITS DEGRADATION CURVE DELTAVG(VG) OF MOS-TRANSISTORS UNDER IRRADIATION
BUXO, J
ESTEVE, D
ENEA, G
MARTINEZ, A
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (09) : 1029 - &
[5] DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS
CASTAGNE, R
VAPAILLE, A
[J]. SURFACE SCIENCE, 1971, 28 (01) : 157 - +
[6] LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON
CASTRO, PL
DEAL, BE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 280 - +
[7] ELECTRON-IRRADIATION EFFECTS IN MOS SYSTEMS
CHURCHILL, JN
COLLINS, TW
HOLMSTROM, FE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (12) : 768 - 777
[8] Cohen M. H., 1970, Journal of Non-Crystalline Solids, V4, P391, DOI 10.1016/0022-3093(70)90068-2
[9] HOLE AND ELECTRON-TRANSPORT IN SIO2-FILMS
CURTIS, OL
SROUR, JR
CHIU, KY
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4506 - 4513
[10] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES
DEAL, BE
SNOW, EH
MEAD, CA
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) : 1873 - &

← 1 2 3 →