LOW-ENERGY ION-BOMBARDMENT OF SILICON DIOXIDE FILMS ON SILICON

被引：40

作者：

MCCAUGHAN, DV ^{[1
]}

MURPHY, VT ^{[1
]}

机构：

[1] BELL TEL LABS, MURRAY HILL, NJ 07974 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 05期

关键词：

D O I：

10.1063/1.1662507

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2008 / 2017

页数：10

共 38 条

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