RECENT DEVELOPMENTS IN DRY PROCESSING FOR VERY-LARGE-SCALE INTEGRATION

[1] EDGE PROFILES IN THE PLASMA-ETCHING OF POLYCRYSTALLINE SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (02) : 366 - 370

[2] BERSIN RL, 1978, SOLID STATE TECH APR, P104

[3] BOTTOMS W, 1980, NOV SEM JAP 80 TOK

[4] Chapman B., 1980, SEMICONDUCTOR IN NOV, P139

[5] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[6] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 291 - 293

[7] LASER-INDUCED MICROSCOPIC ETCHING OF GAAS AND INP [J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 698 - 700

[8] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421

[9] EPHRATH LM, 1981, SEMICONDUCTOR SILICO, P627

[10] EPHRATH LM, 1980, DEC INT EL DEV M, P402

[1] EDGE PROFILES IN THE PLASMA-ETCHING OF POLYCRYSTALLINE SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (02) : 366 - 370

[2] BERSIN RL, 1978, SOLID STATE TECH APR, P104

[3] BOTTOMS W, 1980, NOV SEM JAP 80 TOK

[4] Chapman B., 1980, SEMICONDUCTOR IN NOV, P139

[5] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[6] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 291 - 293

[7] LASER-INDUCED MICROSCOPIC ETCHING OF GAAS AND INP [J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 698 - 700

[8] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421

[9] EPHRATH LM, 1981, SEMICONDUCTOR SILICO, P627

[10] EPHRATH LM, 1980, DEC INT EL DEV M, P402