EDGE-DEFINED PATTERNING OF HYPERFINE REFRACTORY-METAL SILICIDE MOS STRUCTURES

被引：12

作者：

OKAZAKI, S ^{[1
]}

CHOW, TP ^{[1
]}

STECKL, AJ ^{[1
]}

机构：

[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301

来源：

关键词：

D O I：

10.1109/T-ED.1981.20614

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1364 / 1368

页数：5

共 17 条

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