MODELING STUDY OF THE EXPERIMENTAL-TECHNIQUES FOR THE CHARACTERIZATION OF MOSFET HOT-CARRIER AGING

The experimental methods used for the characterization of the hot-carrier-induced damaged region in MOSFETs are evaluated by applying advanced modeling approaches. The impact of interface trap and oxide trapped charge distributions on the charge-pumping characteristics after stress is analyzed for conventional devices with abrupt junctions. The extraction of the spatial profile of interface states in virgin and stressed devices by charge-pumping methods is critically studied. A systematic error is found in some common techniques, which is caused by the variation in the trap emission times during the course of experiment. We focus on the measurements of the spatial distribution of fixed charge trapped in the oxide by using the charge-pumping and capacitance measurements. The presented studies are based on a two-dimensional transient numerical model of the charge-pumping effect. The potential of the gate-induced-drain-leakage (GIDL) characteristics due to band-to-band tunneling to provide information on the localized damaged region is critically investigated.