DANGLING BONDS AND DISLOCATIONS IN SEMICONDUCTORS

被引：32

作者：

HEINE, V

机构：

来源：

PHYSICAL REVIEW | 1966年 / 146卷 / 02期

关键词：

D O I：

10.1103/PhysRev.146.568

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：568 / &

共 23 条

[1] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].

COHEN, ML ;

BERGSTRESSER, TK .

PHYSICAL REVIEW, 1966, 141 (02) :789-+

[2] ANTIMONY EDGE DISLOCATIONS IN INSB [J].

GATOS, HC ;

LAVINE, MC ;

FINN, MC .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) :1174-&

[3] ELECTRONIC SURFACE STATES AND THE CLEANED GERMANIUM SURFACE [J].

HANDLER, P ;

PORTNOY, WM .

PHYSICAL REVIEW, 1959, 116 (03) :516-526

[4] THEORY OF SURFACE STATES [J].

HEINE, V .

PHYSICAL REVIEW, 1965, 138 (6A) :1689-&

[5] SOME THEORY ABOUT SURFACE STATES [J].

HEINE, V .

SURFACE SCIENCE, 1964, 2 :1-7

[6]

HEINE VF, TO BE PUBLISHED

[7] FILLED AND EMPTY DANGLING BONDS IN III-V COMPOUNDS [J].

HOLT, DB .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) :2231-2232

[8] DISLOCATIONS IN THE DIAMOND LATTICE [J].

HORNSTRA, J .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) :129-141

[9] CRYSTAL POTENTIAL AND ENERGY BANDS OF SEMICONDUCTORS .3. SELF-CONSISTENT CALCULATIONS FOR SILICON [J].

KLEINMAN, L ;

PHILLIPS, JC .

PHYSICAL REVIEW, 1960, 118 (05) :1153-1167

[10] GALVANOMAGNETIC PROPERTIES OF GRAIN BOUNDARIES IN GERMANIUM BICRYSTALS FROM 1.25 TO 240 DEGREES K [J].

LANDWEHR, G ;

HANDLER, P .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUL) :891-&

← 1 2 3 →