FABRICATION OF QUANTUM WIRES BY GA FOCUSED-ION-BEAM IMPLANTATION AND THEIR TRANSPORT-PROPERTIES

被引：8

作者：

NAKATA, S

YAMADA, S

HIRAYAMA, Y

SAKU, T

HORIKOSHI, Y

机构：

[1] NTT Basic Research Laboratories, Musashino-Shi, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1990年 / 29卷 / 01期

关键词：

Annealing; Electron-electron scattering; Focused ion beam; Quantized conductance; Quantumwire; Universal conductance fluctuations;

D O I：

10.1143/JJAP.29.48

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantum wire structures are defined on a modulation-doped AlGaAs/GaAs wafer grown by MBE using highly resistive regions formed by focused-Ga-ion-beam scanning and subsequent annealing. These fabricated wires show positive magnetoconductance and universal conductance fluctuations at low temperature. A Schottky electrode is placed on these wires and magnetoresistance characteristics are measured by changing the gate voltage at a fixed temperature. Ballistic electron transport is confirmed for a short wire, 0.6 µm in length, whereas universal conductance fluctuations are observed for a long wire, 2.4 µm in length, and the relationship between the phase coherent length and the conductance is obtained as Lin∝G0.7from the gate voltage dependence on fluctuation amplitude. © 1990 IOP Publishing Ltd.

引用

页码：48 / 52

页数：5

共 18 条

[1] PHASE COHERENCE LENGTH OF ELECTRON WAVES IN NARROW ALGAAS GAAS QUANTUM WIRES FABRICATED BY FOCUSED ION-BEAM IMPLANTATION [J].