SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY OF PN JUNCTIONS FORMED BY ION-IMPLANTATION

被引：24

作者：

LABRASCA, JV ^{[1
]}

CHAPMAN, RC ^{[1
]}

MCGUIRE, GE ^{[1
]}

NEMANICH, RJ ^{[1
]}

机构：

[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 02期

关键词：

D O I：

10.1116/1.585548

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results of scanning tunneling spectroscopy measurements of <100> n- and p-type silicon are reported. Measurements were made in air on surfaces with a native oxide. Different I/V characteristics were observed for differently doped samples, indicating that the surfaces were unpinned. Images are presented of pn junctions formed by the implantation of phosphorus into boron doped Si wafers. The pn junction, or the boundary between implant and substrate regions, was observed in both constant current and constant height scans. The junction was imaged with 125 angstrom point-to-point resolution.

引用

页码：752 / 757

页数：6

共 17 条

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