2.51 EV DONOR-ACCEPTOR PAIR PHOTOLUMINESCENCE FROM ZN-DOPED CUALSE2 EPILAYER GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：7

作者：

CHICHIBU, S

SHIRAKATA, S

SUDO, R

UCHIDA, M

HARADA, Y

MATSUMOTO, S

HIGUCHI, H

ISOMURA, S

机构：

[1] EHIME UNIV,FAC ENGN,MATSUYAMA,EHIME 790,JAPAN

[2] BENTEC CORP,TOKYO 190,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷

关键词：

ZN-DOPING; CUALSE2; LP-MOCVD; D-A PAIR; PHOTOLUMINESCENCE; IONIZATION ENERGY;

D O I：

10.7567/JJAPS.32S3.531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A donor to acceptor pair photoluminescence (PL) peak at 2.51 eV was observed in Zn-doped CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition. The summation of ionization energies of the donor and the acceptor was obtained to be 330 meV from the excitation intensity dependence of the PL peak energy. The Zn impurity is shown to act as a defect-killer because of the apperance of exciton emission at 2.716 eV.

引用

收藏

页码：531 / 533

页数：3

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