2.51 EV PHOTOLUMINESCENCE FROM ZN-DOPED CUALSE2 EPILAYERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：14

作者：

CHICHIBU, S

MATSUMOTO, S

SHIRAKATA, S

ISOMURA, S

HIGUCHI, H

机构：

[1] EHIME UNIV,FAC ENGN,MATSUYAMA,EHIME 790,JAPAN

[2] BENTEC CORP,TACHIKAWA,TOKYO 190,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 25期

关键词：

D O I：

10.1063/1.109054

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A photoluminescence (PL) peak at 2.51 eV was observed at 77 K in Zn-doped CuAlSe2 chalcopyrite semiconductor epilayers grown by a low-pressure metalorganic chemical vapor deposition. The emission can be seen as blue-green. The PL peak at 2.51 eV was absent in Al-rich epilayers. Photoreflectance measurements were performed on both undoped and Zn-doped CuAlSe2 epilayers. Zn doping up to the level of 0.02 at. % did not affect the valence band profile.

引用

页码：3306 / 3308

页数：3

共 19 条

[1] VISIBLE PHOTOLUMINESCENCE OF ZN-DOPED CUALS2 [J].