ON THE INTEGRATED INTENSITY OF X-RAY-DIFFRACTION IN CRYSTALS WITH RANDOMLY DISTRIBUTED DEFECTS

被引：14

作者：

HOLY, V

KUBENA, J

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1989年 / 151卷 / 01期

关键词：

D O I：

10.1002/pssb.2221510103

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：23 / 28

页数：6

共 15 条

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[3] X-RAY REFLECTION CURVES OF SI CRYSTALS WITH MICRODEFECTS IN THE LAUE CASE [J].

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[4] DYSON AND BETHE-SALPETER EQUATIONS FOR DYNAMIC X-RAY-DIFFRACTION IN CRYSTALS WITH RANDOMLY PLACED DEFECTS [J].

HOLY, V ;

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[5] STATISTICAL DYNAMICAL THEORY OF CRYSTAL DIFFRACTION .2. INTENSITY DISTRIBUTION AND INTEGRATED INTENSITY IN THE LAUE CASES [J].

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[6] STATISTICAL DYNAMICAL THEORY OF CRYSTAL DIFFRACTION .1. GENERAL FORMULATION [J].

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[7] THE STUDY OF GROWTH STRIATIONS IN SILICON BY MEANS OF X-RAY REFLECTION-DOUBLE-CRYSTAL TOPOGRAPHY [J].

KUBENA, J ;

HOLY, V .

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[8] INVESTIGATION OF THE GROWTH STRIATIONS IN SILICON BY X-RAY TOPOGRAPHY [J].

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[9]

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[10]

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