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INVESTIGATION OF THE GROWTH STRIATIONS IN SILICON BY X-RAY TOPOGRAPHY

被引：15
作者：
KUBENA, J
HOLY, V
机构：
来源：
CZECHOSLOVAK JOURNAL OF PHYSICS | 1983年 / 33卷 / 12期
关键词：
D O I：
10.1007/BF01590221
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：1315 / &
相关论文
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