OXIDE MODIFICATION DUE TO HIGH-TEMPERATURE PROCESSING OF SI/SIO2/SI STRUCTURES

被引：4

作者：

DEVINE, RAB

WARREN, WL

SHANEYFELT, MR

FLEETWOOD, DM

ASPER, B

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

[2] CEN G,DMEL,CEA TECHNOL AVANCEE,F-38041 GRENOBLE,FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 84卷 / 02期

关键词：

D O I：

10.1016/0168-583X(94)95765-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Si/SiO2/Si structures have been subjected to 6 h anneals at 1320 degrees C and defects generated by the annealing process revealed by ultra-violet and X ray irradiation and by hole injection. Two types of oxygen-vacancy related defects have been detected in the oxide by electron spin resonance, one involving Si interstitials. They are both observed to be located within 100 nm of each of the Si/SiO2 interfaces. It is reasoned that the high temperature annealing process getters oxygen from the oxide into the over and underlying Si.

引用

页码：254 / 257

页数：4

共 11 条

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