EXCESS-SI RELATED DEFECT CENTERS IN BURIED SIO2 THIN-FILMS

被引：37

作者：

WARREN, WL ^{[1
]}

FLEETWOOD, DM ^{[1
]}

SHANEYFELT, MR ^{[1
]}

SCHWANK, JR ^{[1
]}

WINOKUR, PS ^{[1
]}

DEVINE, RAB ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 25期

关键词：

D O I：

10.1063/1.109061

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using electron paramagnetic resonance (EPR) and capacitance-voltage measurements we have investigated the role of excess-silicon related defect centers as charge traps in separation by the implantation of oxygen materials. Three types of EPR-active centers were investigated: oxygen vacancy Egamma' centers (O3=Si. +Si=O3), delocalized Edelta' centers, and D centers (Si3=Si.). It was found that all of these paramagnetic centers are created by selective hole injection, and are reasonably ascribed as positively charged when paramagnetic. These results provide the first experimental evidence for (1) the charge state of the Edelta' center, and (2) that the D center is an electrically active point defect in these materials.

引用

页码：3330 / 3332

页数：3

共 18 条

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