DETERMINATION OF THE CHARGE-TRAPPING CHARACTERISTICS OF BURIED OXIDES USING A 10-KEV X-RAY SOURCE

Oxide photocurrent measurements and capacitance-voltage shift measurements were performed with a 10-keV x-ray source on metal-oxide semiconductor (MOS) buried-oxide (BOX) capacitors to characterize the charge motion and trapping in SIMOX buried-oxide layers. Photocurrents measured in the BOX are about one-half of the expected theoretical current that would be measured if both charge carriers moved through the oxide. Results from the photocurrent measurements together with capacitance-voltage (C-V) measurements and theoretical modeling indicate (for radiation generated charges escaping initial recombination) that holes are essentially trapped in place and most electrons move through the bulk oxide. © 1990 IEEE