TOTAL DOSE CHARACTERIZATIONS OF CMOS DEVICES IN OXYGEN IMPLANTED SILICON-ON-INSULATOR

被引：22

作者：

MAO, BY ^{[1
]}

CHEN, CE ^{[1
]}

MATLOUBIAN, M ^{[1
]}

HITE, LR ^{[1
]}

POLLACK, G ^{[1
]}

HUGHES, HL ^{[1
]}

MALEY, K ^{[1
]}

机构：

[1] USN, RES LAB, WASHINGTON, DC 20375 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/TNS.1986.4334668

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1702 / 1705

页数：4

共 11 条

[1] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS
ALPERIN, ME
HOLLAWAY, TC
HAKEN, RA
GOSMEYER, CD
KARNAUGH, RV
PARMANTIE, WD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 141 - 149
[2] Chen C.-E., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P702
[3] TOTAL DOSE RADIATION-BIAS EFFECTS IN LASER-RECRYSTALLIZED SOI MOSFETS
DAVIS, GE
HUGHES, HL
KAMINS, TI
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1685 - 1689
[4] TRANSIENT RADIATION EFFECTS IN SOI MEMORIES
DAVIS, GE
HITE, LR
BLAKE, TGW
CHEN, CE
LAM, HW
DEMOYER, R
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 4432 - 4437
[5] OPTIMIZATION OF OXYGEN-IMPLANTED SILICON SUBSTRATES FOR CMOS DEVICES BY ELECTRICAL CHARACTERIZATION
FOSTER, DJ
BUTLER, AL
BOLBOT, PH
ALDERMAN, JC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (03) : 354 - 360
[6] Hashimoto K., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P672
[7] MICROSTRUCTURE OF SILICON IMPLANTED WITH HIGH-DOSE OXYGEN IONS
JAUSSAUD, C
STOEMENOS, J
MARGAIL, J
DUPUY, M
BLANCHARD, B
BRUEL, M
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (11) : 1064 - 1066
[8] GAMMA-RAY IRRADIATION EFFECTS ON VLSI GEOMETRY MOSFETS FABRICATED ON LASER RECRYSTALLIZED SOI WAFERS
KIM, JS
BLUZER, N
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1690 - 1695
[9] MICROSTRUCTURE OF HIGH-TEMPERATURE ANNEALED BURIED OXIDE SILICON-ON-INSULATOR
MAO, BY
CHANG, PH
LAM, HW
SHEN, BW
KEENAN, JA
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (12) : 794 - 796
[10] EFFECTS OF IONIZING-RADIATION ON SOI/CMOS DEVICES FABRICATED IN ZONE-MELTING-RECRYSTALLIZED SI FILMS ON SIO2
TSAUR, BY
MOUNTAIN, RW
CHEN, CK
TURNER, GW
FAN, JCC
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) : 238 - 240

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