GAMMA-RAY IRRADIATION EFFECTS ON VLSI GEOMETRY MOSFETS FABRICATED ON LASER RECRYSTALLIZED SOI WAFERS

被引：5

作者：

KIM, JS

BLUZER, N

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1982年 / 29卷 / 06期

关键词：

D O I：

10.1109/TNS.1982.4336430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1690 / 1695

页数：6

共 16 条

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