OPTIMIZATION OF OXYGEN-IMPLANTED SILICON SUBSTRATES FOR CMOS DEVICES BY ELECTRICAL CHARACTERIZATION

[1] DAS K, 1981, I PHYS C SER, V60, P301

[2] Foster D. J., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P804

[3] FOSTER DJ, 1983, ELECTRON LETT, V19, P648

[4] FORMATION OF BURIED INSULATING LAYERS IN SILICON BY THE IMPLANTATION OF HIGH-DOSES OF OXYGEN [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 157 - 164

[5] HEMMENT PLF, 1983, P ISIAT KYOTO

[6] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J]. ELECTRONICS LETTERS, 1978, 14 (18) : 593 - 594

[7] IZUMI K, 1983, 1982 S VLSI, P10

[8] SURFACE RESTORATION OF OXYGEN-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 1991 - 1999

[9] SURFACE SILICON CRYSTALLINITY AND ANOMALOUS COMPOSITION PROFILES OF BURIED SIO2 AND SI3N4 LAYERS FABRICATED BY OXYGEN AND NITROGEN IMPLANTATION IN SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (05): : 744 - 751

[10] OPTIMIZATION OF IMPLANTATION CONDITIONS FOR THE FORMATION OF BURIED SIO2 LAYERS IN SILICON [J]. ELECTRONICS LETTERS, 1982, 18 (05) : 215 - 216

[1] DAS K, 1981, I PHYS C SER, V60, P301

[2] Foster D. J., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P804

[3] FOSTER DJ, 1983, ELECTRON LETT, V19, P648

[4] FORMATION OF BURIED INSULATING LAYERS IN SILICON BY THE IMPLANTATION OF HIGH-DOSES OF OXYGEN [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 157 - 164

[5] HEMMENT PLF, 1983, P ISIAT KYOTO

[6] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J]. ELECTRONICS LETTERS, 1978, 14 (18) : 593 - 594

[7] IZUMI K, 1983, 1982 S VLSI, P10

[8] SURFACE RESTORATION OF OXYGEN-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 1991 - 1999

[9] SURFACE SILICON CRYSTALLINITY AND ANOMALOUS COMPOSITION PROFILES OF BURIED SIO2 AND SI3N4 LAYERS FABRICATED BY OXYGEN AND NITROGEN IMPLANTATION IN SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (05): : 744 - 751

[10] OPTIMIZATION OF IMPLANTATION CONDITIONS FOR THE FORMATION OF BURIED SIO2 LAYERS IN SILICON [J]. ELECTRONICS LETTERS, 1982, 18 (05) : 215 - 216