OPTIMIZATION OF IMPLANTATION CONDITIONS FOR THE FORMATION OF BURIED SIO2 LAYERS IN SILICON

被引：1

作者：

MOSSADEQ, H ^{[1
]}

BENNETT, RJ ^{[1
]}

ANAND, KV ^{[1
]}

机构：

[1] FAIRCHILD CAMERA & INSTRUMENT CORP,TECHNOL GRP,PALO ALTO,CA 94304

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 05期

关键词：

D O I：

10.1049/el:19820147

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：215 / 216

页数：2

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