SURFACE RESTORATION OF OXYGEN-IMPLANTED SILICON

被引:8
作者
KIM, MJ
BROWN, DM
GARFINKEL, M
机构
关键词
D O I
10.1063/1.332213
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1991 / 1999
页数:9
相关论文
共 32 条
[1]   STUDY OF SILICON-OXIDES PREPARED BY OXYGEN IMPLANTATION INTO SILICON [J].
BADAWI, MH ;
ANAND, KV .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (14) :1931-1942
[3]  
BRICE DK, 1971, ION IMPLANTATION, P101
[4]   ANALYSIS OF EVAPORATED SILICON OXIDE FILMS BY MEANS OF (D,P) NUCLEAR REACTIONS AND INFRARED SPECTROPHOTOMETRY [J].
CACHARD, A ;
ROGER, JA ;
PIVOT, J ;
DUPUY, CHS .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 5 (03) :637-&
[5]   DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J].
CORBETT, JW ;
WATKINS, GD ;
CHRENKO, RM ;
MCDONALD, RS .
PHYSICAL REVIEW, 1961, 121 (04) :1015-&
[6]   PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J].
CORBETT, JW ;
WATKINS, GD .
PHYSICAL REVIEW, 1965, 138 (2A) :A555-&
[7]  
CRAVEN RA, 1981, EXT ABSTR IEDM, P228
[8]   EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J].
FULLER, CS ;
LOGAN, RA .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1427-1436
[9]   ESTIMATION OF IMPURITY PROFILES IN ION-IMPLANTED AMORPHOUS TARGETS USING JOINED HALF-GAUSSIAN DISTRIBUTIONS [J].
GIBBONS, JF ;
MYLROIE, S .
APPLIED PHYSICS LETTERS, 1973, 22 (11) :568-569
[10]  
GIBBONS JF, 1975, PROJECTED RANGE STAT, P22