TOTAL DOSE RADIATION-BIAS EFFECTS IN LASER-RECRYSTALLIZED SOI MOSFETS

被引：29

作者：

DAVIS, GE ^{[1
]}

HUGHES, HL ^{[1
]}

KAMINS, TI ^{[1
]}

机构：

[1] HEWLETT PACKARD LABS, PALO ALTO, CA 94304 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1982年 / 29卷 / 06期

关键词：

D O I：

10.1109/TNS.1982.4336429

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1685 / 1689

页数：5

共 14 条

[1] SIMPLE METHOD FOR EVALUATING ELECTRONIC-PROPERTIES AT SILICON-SAPPHIRE INTERFACE
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[J]. ELECTRONICS LETTERS, 1980, 16 (16) : 617 - 618
[2] RADIATION HARDNESS OF LSI-VLSI FABRICATION PROCESSES
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[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) : 5053 - 5055
[3] DEEP LEVELS IN SCANNED ELECTRON-BEAM ANNEALED SILICON
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[J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 425 - 428
[4] MONOLITHIC INTEGRATED-CIRCUIT FABRICATED IN LASER-ANNEALED POLYSILICON
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 290 - 293
[5] RADIATION-INDUCED LEAKAGE CURRENT IN N-CHANNEL SOS TRANSISTORS
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[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) : 208 - 210
[6] CHARACTERISTICS OF MOSFETS FABRICATED IN LASER-RECRYSTALLIZED POLYSILICON ISLANDS WITH A RETAINING WALL STRUCTURE ON AN INSULATING SUBSTRATE
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[J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 206 - 208
[7] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON
LEE, KF
GIBBONS, JF
SARASWAT, KC
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 173 - 175
[8] CONSIDERATIONS FOR HARDENING MOS DEVICES AND CIRCUITS FOR LOW RADIATION-DOSES
MCGARRITY, JM
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1739 - 1744
[9] IONIZING-RADIATION EFFECTS IN SOS STRUCTURES
NEAMEN, D
BUCHANAN, B
SHEDD, W
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2197 - 2202
[10] RADIATION-INDUCED CHARGE TRAPPING AT SILICON SAPPHIRE SUBSTRATE INTERFACE
NEAMEN, D
SHEDD, W
BUCHANAN, B
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) : 211 - 216

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