TOTAL DOSE RADIATION-BIAS EFFECTS IN LASER-RECRYSTALLIZED SOI MOSFETS

被引：29

作者：

DAVIS, GE ^{[1
]}

HUGHES, HL ^{[1
]}

KAMINS, TI ^{[1
]}

机构：

[1] HEWLETT PACKARD LABS, PALO ALTO, CA 94304 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1982年 / 29卷 / 06期

关键词：

D O I：

10.1109/TNS.1982.4336429

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1685 / 1689

页数：5

相关论文

共 14 条

[11] INVESTIGATION OF RADIATION EFFECTS AND HARDENING PROCEDURES FOR CMOS-SOS
PEEL, JL
PANCHOLY, RK
KUHLMANN, GJ
OKI, TJ
WILLIAMS, RA
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2185 - 2189
[12] SILICON-ON-INSULATOR MOSFETS FABRICATED ON LASER-ANNEALED POLYSILICON ON SIO2
TASCH, AF
HOLLOWAY, TC
LEE, KF
GIBBONS, JF
[J]. ELECTRONICS LETTERS, 1979, 15 (14) : 435 - 437
[13] EFFECTS OF IONIZING-RADIATION ON N-CHANNEL MOSFETS FABRICATED IN ZONE-MELTING-RECRYSTALLIZED SI FILMS ON SIO2
TSAUR, BY
FAN, JCC
TURNER, GW
SILVERSMITH, DJ
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (07): : 195 - 197
[14] N-CHANNEL DEEP-DEPLETION METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN ZONE-MELTING-RECRYSTALLIZED POLYCRYSTALLINE SI FILMS ON SIO2
TSAUR, BY
GEIS, MW
FAN, JCC
SILVERSMITH, DJ
MOUNTAIN, RW
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (11) : 909 - 911