INVESTIGATION OF RADIATION EFFECTS AND HARDENING PROCEDURES FOR CMOS-SOS

被引：18

作者：

PEEL, JL ^{[1
]}

PANCHOLY, RK ^{[1
]}

KUHLMANN, GJ ^{[1
]}

OKI, TJ ^{[1
]}

WILLIAMS, RA ^{[1
]}

机构：

[1] ROCKWELL INT CORP,ELECTR RES DIV,3370 MIRALOMA AVE,ANAHEIM,CA 92803

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1975年 / 22卷 / 06期

关键词：

D O I：

10.1109/TNS.1975.4328102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2185 / 2189

页数：5

共 15 条

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[9]

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[10] ION-IMPLANTED SEMICONDUCTOR-DEVICES [J].

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