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IONIZING-RADIATION EFFECTS IN SOS STRUCTURES
被引:5
作者
:
NEAMEN, D
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,SYST COMMAND,CAMBRIDGE RES LABS,BEDFORD,MA 01730
USAF,SYST COMMAND,CAMBRIDGE RES LABS,BEDFORD,MA 01730
NEAMEN, D
[
1
]
BUCHANAN, B
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,SYST COMMAND,CAMBRIDGE RES LABS,BEDFORD,MA 01730
USAF,SYST COMMAND,CAMBRIDGE RES LABS,BEDFORD,MA 01730
BUCHANAN, B
[
1
]
SHEDD, W
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,SYST COMMAND,CAMBRIDGE RES LABS,BEDFORD,MA 01730
USAF,SYST COMMAND,CAMBRIDGE RES LABS,BEDFORD,MA 01730
SHEDD, W
[
1
]
机构
:
[1]
USAF,SYST COMMAND,CAMBRIDGE RES LABS,BEDFORD,MA 01730
来源
:
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
|
1975年
/ 22卷
/ 06期
关键词
:
D O I
:
10.1109/TNS.1975.4328105
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:2197 / 2202
页数:6
相关论文
共 12 条
[1]
COBBOLD RSC, 1970, THEORY APPLICATIONS
[2]
DENNARD RH, 1973, INT ELECTRON DEVICES
[3]
INVESTIGATION OF CARRIER TRANSPORT IN THIN SILICON-ON-SAPPHIRE FILMS USING MIS DEEP DEPLETION HALL-EFFECT STRUCTURES
ELLIOT, ABM
论文数:
0
引用数:
0
h-index:
0
ELLIOT, ABM
ANDERSON, JC
论文数:
0
引用数:
0
h-index:
0
ANDERSON, JC
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(05)
: 531
-
+
[4]
RADIATION-INDUCED LEAKAGE CURRENT IN N-CHANNEL SOS TRANSISTORS
KJAR, RA
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RES DIV,3370 MIRALOMA AVE,ANAHEIM,CA 92801
ROCKWELL INT,ELECTR RES DIV,3370 MIRALOMA AVE,ANAHEIM,CA 92801
KJAR, RA
PEEL, J
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RES DIV,3370 MIRALOMA AVE,ANAHEIM,CA 92801
ROCKWELL INT,ELECTR RES DIV,3370 MIRALOMA AVE,ANAHEIM,CA 92801
PEEL, J
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1974,
NS21
(06)
: 208
-
210
[5]
RADIATION-INDUCED CHARGE TRAPPING AT SILICON SAPPHIRE SUBSTRATE INTERFACE
NEAMEN, D
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,CAMBRIDGE RES LABS,AIR FORCE SYST COMMAND,BEDFORD,MA 01730
USAF,CAMBRIDGE RES LABS,AIR FORCE SYST COMMAND,BEDFORD,MA 01730
NEAMEN, D
SHEDD, W
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,CAMBRIDGE RES LABS,AIR FORCE SYST COMMAND,BEDFORD,MA 01730
USAF,CAMBRIDGE RES LABS,AIR FORCE SYST COMMAND,BEDFORD,MA 01730
SHEDD, W
BUCHANAN, B
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,CAMBRIDGE RES LABS,AIR FORCE SYST COMMAND,BEDFORD,MA 01730
USAF,CAMBRIDGE RES LABS,AIR FORCE SYST COMMAND,BEDFORD,MA 01730
BUCHANAN, B
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1974,
NS21
(06)
: 211
-
216
[6]
PERMANENT IONIZING-RADIATION EFFECTS IN DIELECTRICALLY BOUNDED FIELD-EFFECT TRANSISTORS
NEAMEN, D
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,CAMBRIDGE RES LABS,AF SYST COMMAND,BEDFORD,MA 01730
USAF,CAMBRIDGE RES LABS,AF SYST COMMAND,BEDFORD,MA 01730
NEAMEN, D
SHEDD, W
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,CAMBRIDGE RES LABS,AF SYST COMMAND,BEDFORD,MA 01730
USAF,CAMBRIDGE RES LABS,AF SYST COMMAND,BEDFORD,MA 01730
SHEDD, W
BUCHANA, B
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,CAMBRIDGE RES LABS,AF SYST COMMAND,BEDFORD,MA 01730
USAF,CAMBRIDGE RES LABS,AF SYST COMMAND,BEDFORD,MA 01730
BUCHANA, B
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1973,
NS20
(06)
: 158
-
165
[7]
POKSHEVA JG, 1974, 8TH AS C CIRC SYST C
[8]
RICHMAN P, 1967, CHARACTERISTICS OPER
[9]
RADIATION HARDENING OF CMOS-SOS INTEGRATED-CIRCUITS
SCHLESIER, KM
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
SCHLESIER, KM
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1974,
NS21
(06)
: 152
-
158
[10]
TIHANYI J, 1975, SOLID STATE ELECTRON, V18, P308
←
1
2
→
共 12 条
[1]
COBBOLD RSC, 1970, THEORY APPLICATIONS
[2]
DENNARD RH, 1973, INT ELECTRON DEVICES
[3]
INVESTIGATION OF CARRIER TRANSPORT IN THIN SILICON-ON-SAPPHIRE FILMS USING MIS DEEP DEPLETION HALL-EFFECT STRUCTURES
ELLIOT, ABM
论文数:
0
引用数:
0
h-index:
0
ELLIOT, ABM
ANDERSON, JC
论文数:
0
引用数:
0
h-index:
0
ANDERSON, JC
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(05)
: 531
-
+
[4]
RADIATION-INDUCED LEAKAGE CURRENT IN N-CHANNEL SOS TRANSISTORS
KJAR, RA
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RES DIV,3370 MIRALOMA AVE,ANAHEIM,CA 92801
ROCKWELL INT,ELECTR RES DIV,3370 MIRALOMA AVE,ANAHEIM,CA 92801
KJAR, RA
PEEL, J
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RES DIV,3370 MIRALOMA AVE,ANAHEIM,CA 92801
ROCKWELL INT,ELECTR RES DIV,3370 MIRALOMA AVE,ANAHEIM,CA 92801
PEEL, J
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1974,
NS21
(06)
: 208
-
210
[5]
RADIATION-INDUCED CHARGE TRAPPING AT SILICON SAPPHIRE SUBSTRATE INTERFACE
NEAMEN, D
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,CAMBRIDGE RES LABS,AIR FORCE SYST COMMAND,BEDFORD,MA 01730
USAF,CAMBRIDGE RES LABS,AIR FORCE SYST COMMAND,BEDFORD,MA 01730
NEAMEN, D
SHEDD, W
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,CAMBRIDGE RES LABS,AIR FORCE SYST COMMAND,BEDFORD,MA 01730
USAF,CAMBRIDGE RES LABS,AIR FORCE SYST COMMAND,BEDFORD,MA 01730
SHEDD, W
BUCHANAN, B
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,CAMBRIDGE RES LABS,AIR FORCE SYST COMMAND,BEDFORD,MA 01730
USAF,CAMBRIDGE RES LABS,AIR FORCE SYST COMMAND,BEDFORD,MA 01730
BUCHANAN, B
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1974,
NS21
(06)
: 211
-
216
[6]
PERMANENT IONIZING-RADIATION EFFECTS IN DIELECTRICALLY BOUNDED FIELD-EFFECT TRANSISTORS
NEAMEN, D
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,CAMBRIDGE RES LABS,AF SYST COMMAND,BEDFORD,MA 01730
USAF,CAMBRIDGE RES LABS,AF SYST COMMAND,BEDFORD,MA 01730
NEAMEN, D
SHEDD, W
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,CAMBRIDGE RES LABS,AF SYST COMMAND,BEDFORD,MA 01730
USAF,CAMBRIDGE RES LABS,AF SYST COMMAND,BEDFORD,MA 01730
SHEDD, W
BUCHANA, B
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,CAMBRIDGE RES LABS,AF SYST COMMAND,BEDFORD,MA 01730
USAF,CAMBRIDGE RES LABS,AF SYST COMMAND,BEDFORD,MA 01730
BUCHANA, B
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1973,
NS20
(06)
: 158
-
165
[7]
POKSHEVA JG, 1974, 8TH AS C CIRC SYST C
[8]
RICHMAN P, 1967, CHARACTERISTICS OPER
[9]
RADIATION HARDENING OF CMOS-SOS INTEGRATED-CIRCUITS
SCHLESIER, KM
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
SCHLESIER, KM
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1974,
NS21
(06)
: 152
-
158
[10]
TIHANYI J, 1975, SOLID STATE ELECTRON, V18, P308
←
1
2
→