SCANNING TUNNELING MICROSCOPY ON PHOTOCONDUCTIVE SEMIINSULATING GAAS

被引：41

作者：

VANDEWALLE, GFA

VANKEMPEN, H

WYDER, P

DAVIDSSON, P

机构：

[1] MAX PLANCK INST SOLID STATE RES,HIGH FIELD MAGNET LAB,F-38042 GRENOBLE,FRANCE

[2] CATHOLIC UNIV NIJMEGEN,MAT RES INST,6525 ED NIJMEGEN,NETHERLANDS

[3] CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN

来源：

关键词：

D O I：

10.1063/1.98125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：22 / 24

页数：3

共 11 条

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BINNING, G
ROHRER, H
GERBER, C
WEIBEL, E
[J]. PHYSICAL REVIEW LETTERS, 1982, 49 (01) : 57 - 61
[3] BUBE RH, 1960, PHOTOCONDUCTIVITY SO, P11
[4] VOLTAGE DROP IN THE EXPERIMENTS OF SCANNING TUNNELING MICROSCOPY FOR SI
FLORES, F
GARCIA, N
[J]. PHYSICAL REVIEW B, 1984, 30 (04): : 2289 - 2291
[5] HERMSEN JGH, UNPUB SURFACE SCI
[6] PHOTOCONDUCTIVITY IN SEMI-INSULATING GALLIUM ARSENIDE
HOLEMAN, BR
HILSUM, C
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[7] SCANNING TUNNELING POTENTIOMETRY
MURALT, P
POHL, DW
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (08) : 514 - 516
[8] SEEGER K, 1982, SEMICONDUCTOR PHYSIC, pCH12
[9] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV
STURGE, MD
[J]. PHYSICAL REVIEW, 1962, 127 (03): : 768 - +
[10] HIGH-STABILITY SCANNING TUNNELING MICROSCOPE
VANDEWALLE, GFA
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WYDER, P
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1985, 56 (08) : 1573 - 1576