VOLTAGE DROP IN THE EXPERIMENTS OF SCANNING TUNNELING MICROSCOPY FOR SI

被引:58
作者
FLORES, F
GARCIA, N
机构
来源
PHYSICAL REVIEW B | 1984年 / 30卷 / 04期
关键词
D O I
10.1103/PhysRevB.30.2289
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2289 / 2291
页数:3
相关论文
共 5 条
[1]   7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J].
BINNIG, G ;
ROHRER, H ;
GERBER, C ;
WEIBEL, E .
PHYSICAL REVIEW LETTERS, 1983, 50 (02) :120-123
[2]   TUNNELING THROUGH A CONTROLLABLE VACUUM GAP [J].
BINNIG, G ;
ROHRER, H ;
GERBER, C ;
WEIBEL, E .
APPLIED PHYSICS LETTERS, 1982, 40 (02) :178-180
[3]  
BINNING G, COMMUNICATION
[4]   MODEL-THEORY FOR SCANNING TUNNELING MICROSCOPY - APPLICATION TO AU(110)(1X2) [J].
GARCIA, N ;
OCAL, C ;
FLORES, F .
PHYSICAL REVIEW LETTERS, 1983, 50 (25) :2002-2005
[5]  
SMITH RA, 1978, SEMICONDUCTORS, pCH7