SEMICONDUCTOR SURFACE CHARACTERIZATION USING TRANSVERSE ACOUSTOELECTRIC VOLTAGE VERSUS VOLTAGE MEASUREMENTS

被引：16

作者：

DAVARI, B ^{[1
]}

DAS, P ^{[1
]}

BHARAT, R ^{[1
]}

机构：

[1] ROCKWELL INT CORP,CTR SCI,ANAHEIM,CA 92803

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 01期

关键词：

D O I：

10.1063/1.331721

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：415 / 420

页数：6

共 16 条

[1] DETERMINATION OF SEMICONDUCTOR SURFACE PROPERTIES USING SURFACE ACOUSTIC-WAVES [J].

DAS, P ;

MOTAMEDI, ME ;

WEBSTER, RT .

APPLIED PHYSICS LETTERS, 1975, 27 (03) :120-122

[2] ELECTRICAL-PROPERTIES OF SEMICONDUCTOR-ELECTROLYTE (CDS-NICL2) USING SURFACE ACOUSTIC-WAVE TECHNIQUES [J].

DAS, P ;

WEBSTER, RT ;

DAVARI, B .

APPLIED PHYSICS LETTERS, 1979, 34 (05) :307-309

[3]

DAS P, 1979, SEP ULTR S P, P278

[4]

DAS P, 1976, J VAC SCI TECHNOL, V13, P9481

[5] A STUDY OF THE HIGH-RESISTIVITY GAAS SURFACE AND THE GAAS OXIDE INTERFACE USING 2-BEAM TRANSVERSE ACOUSTICOELECTRIC VOLTAGE SPECTROSCOPY [J].

DAVARI, B ;

DAS, P .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) :3668-3672

[6] QUENCHING AND ENHANCEMENT OF THE EXCITON AND SUBBAND-GAP ABSORPTION IN GAAS-CR USING 2-BEAM TRANSVERSE ACOUSTOELECTRIC VOLTAGE SPECTROSCOPY [J].

DAVARI, B ;

DAS, P .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :807-809

[7] DIRECT MEASUREMENT OF PYROELECTRIC FIGURES OF MERIT OF PROPER AND IMPROPER FERROELECTRICS [J].

SHAULOV, A ;

BELL, MI ;

SMITH, WA .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4913-4919

[8]

GHANDHI SK, 1968, THEORY PRACTICE MICR, P418

[9] DETERMINATION OF CAPTURE CROSS-SECTION AND SURFACE-STATES CONCENTRATION PROFILE USING THE SURFACE-ACOUSTIC-WAVE CONVOLVER [J].

GILBOA, H ;

DAS, PK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (02) :461-466

[10]

GILBOA H, 1977, MAONR15 RPI TECHN RE

← 1 2 →