ROOM-TEMPERATURE CW-OPERATION OF GASB/ALGASB MQW LASER-DIODES GROWN BY MBE

被引：36

作者：

OHMORI, Y

SUZUKI, Y

OKAMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 08期

关键词：

D O I：

10.1143/JJAP.24.L657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L657 / L660

页数：4

共 18 条

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[2]

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[3]

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MERZ, JL .

APPLIED PHYSICS LETTERS, 1983, 43 (11) :1059-1061

[5] SPECTRUM STUDIES ON A GAAS-ALGAAS MULTI-QUANTUM-WELL LASER DIODE GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[6] OPTICAL-PROPERTIES OF GASB-ALSB SUPER-LATTICES [J].

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[7]

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[8] ROOM-TEMPERATURE OPERATION OF AL0.17GA0.83SB/GASB MULTI-QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

OHMORI, Y ;

TARUCHA, S ;

HORIKOSHI, Y ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02) :L94-L96

[9] OPTICAL-PROPERTIES OF SUPERLATTICE AND MQW LASER DIODE [J].

OKAMOTO, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :687-693

[10] IMPURITY TRAPPING, INTERFACE STRUCTURE, AND LUMINESCENCE OF GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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