GA0.47IN0.53AS VERTICAL PHOTOCONDUCTIVE DETECTORS WITH HIGH-GAIN AND LOW BIAS VOLTAGE

被引:2
作者
ANTREASYAN, A
CHEN, CY
机构
关键词
D O I
10.1109/T-ED.1986.22463
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:188 / 191
页数:4
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共 5 条
[1]   HIGH-SENSITIVITY GA0.47IN0.53AS PHOTOCONDUCTIVE DETECTORS PREPARED BY VAPOR-PHASE EPITAXY [J].
CHEN, CY ;
KASPER, BL ;
COX, HM .
APPLIED PHYSICS LETTERS, 1984, 44 (12) :1142-1144
[2]   LOW-NOISE GA0.47IN0.53 AS PHOTOCONDUCTIVE DETECTORS USING FE COMPENSATION [J].
CHEN, CY ;
CHI, GC .
APPLIED PHYSICS LETTERS, 1984, 45 (10) :1083-1085
[3]   MODULATION-DOPED GA0.47IN0.53AS/AL0.48IN0.52AS PLANAR PHOTOCONDUCTIVE DETECTORS FOR 1.0-1.55-MUM APPLICATIONS [J].
CHEN, CY ;
PANG, YM ;
GARBINSKI, PA ;
CHO, AY ;
ALAVI, K .
APPLIED PHYSICS LETTERS, 1983, 43 (03) :308-310
[4]  
CLAWSON AR, 1983, 2ND P NATO INP WORKS
[5]   A PHOTOCONDUCTIVE DETECTOR FOR HIGH-SPEED FIBER COMMUNICATION [J].
GAMMEL, JC ;
METZE, GM ;
BALLANTYNE, JM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) :841-849